EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振

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EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振

EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振，日本进口晶振，EPSON爱普生株式会社，型号：SG2016HHN，编码为：X1G0062310001，频率为：156.250000MHz，小体积晶振尺寸：2.0x1.6x0.73mm，HCSL输出差分晶振，低相位抖动晶体振荡器SPXO，六脚贴片晶振，电源电压+2.5V或+3.3V，爱普生的SG2016HHN产品系列支持HCSL（高速电流转向逻辑），并满足在PCIe Gen6为止的时间遵从性抖动要求。产品组最大90 ps相位抖动，支持频率从25MHz到5MHz500MHz，涵盖了大多数网络、数据中心和通信应用的系统要求。SG2016HHN 有源晶振具有超小型，轻薄型，低相位噪声，低抖动，低功耗，低电源电压，低耗能，低损耗等特点。应用于：使用PCIe Gen5或6的通信设备（SSD、网卡等），光通信、光收发器，路由器，交换机、GPS定位系统，光纤通信，10G以太网等应用。

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EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振，参数图

Item	Symbol	SG2016HHN	Conditions / Remarks
Output frequency range	fo	156.250000 MHz	Please contact us for available frequencies.
Supply voltage	VCC	D:2.5 V ± 5 % C:3.3 V± 5 %
Storage temperature	T_stg	-55 ℃ to +125 ℃
Operating temperature	T_use	G: -40℃ to +85℃, H: -40℃ to +105 ℃
Frequency tolerance	f_tol	C: ±20 × 10-6 Max.	Includes initial frequency tolerance, frequency / temperature characteristics, frequency / voltage coefficient and 10 years aging (+25 °C)
Current consumption	ICC	35 mA Max.	25 MHz ≤ fo < 212 MHz	OE or S? T? = VCC,
Current consumption	ICC	40 mA Max.	212 MHz ≤ fo < 500 MHz	L_HCSL = 50 Ω
Disable current	I_dis	25 mA Max.	OE = GND
Stand-by current	I_std	30 μA Max.	S? T? = GND, T_use Max. = +85 °C
Stand-by current	I_std	60 μA Max.	S? T? = GND, T_use Max. = +105 °C
Symmetry	SYM	45 % to 55 %	At output crossing point
Output voltage		0.5 V to 0.7 V	25 MHz ≤ fo < 212 MHz	Output option: A
	VOH	0.4 V to 0.65 V	212 MHz ≤ fo < 500 MHz	Output option: A
		0.6 V to 0.8 V	25 MHz ≤ fo < 212 MHz	Output option: B
		0.5 V to 0.75 V	212 MHz ≤ fo < 500 MHz	Output option: B
	VOL	-0.15 V to +0.15 V
Differential swing	VSW	0.7 V to 1.4 V	Output option: A
Differential swing	VSW	0.8 V to 1.6 V	Output option: B
Crossing voltage	VCR	0.25 V to 0.55 V
Rise time / Fall time	tr/tf	0.7 ns Max.	20 % - 80 % (VOH - VOL)
Differential output	Rr/Rf	2 V/ns to 10 V/ns	Between -0.15 V and 0.15 V of differential output
rise slew rate / fall slew rate	Rr/Rf	2 V/ns to 10 V/ns	Between -0.15 V and 0.15 V of differential output
Output load condition	L_HCSL	50 Ω
Input voltage	VIH	70 % VCC Min.	OE or S? T? terminal
Input voltage	VIL	30 % VCC Max.	OE or S? T? terminal
Output enable time	tsta_oe	500 ns Max.	t = 0 at OE = 70 % VCC
Output enable time	tsta_st	10 ms Max.	t = 0 at S? T? = 70 % VCC
Output disable time	tstp_oe	100 ns Max.	t = 0 at OE = 30 % VCC
Output disable time	tstp_st	100 ns Max.	t = 0 at S? T? = 30 % VCC
Start-up time	t_str	10 ms Max.	t = 0 at 90 % VCC
Phase jitter		200 fs Max.	25 MHz ≤ fo < 100 MHz	Offset frequency
	tPJ	90 fs Max.	100 MHz ≤ fo ≤ 156 MHz	fo < 50 MHz:
		70 fs Max.	156 MHz < fo ≤ 212 MHz	12 kHz to 5 MHz fo ≥ 50 MHz:
		60 fs Max.	212 MHz < fo ≤ 391 MHz	12 kHz to 20 MHz
		50 fs Max.	391 MHz < fo ≤ 500 MHz
Jitter	tc-c	60 ps Max.	Cycle to cycle jitter (Peak to Peak)
PCIe jitter limits	-	0.1 ps Max.	For PCIe Gen5
for CC architecture	-	0.06 ps Max.	For PCIe Gen6

EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振，尺寸图

EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振

差分晶振有不同的输出信号，LV-PECL，LVDS，HCSL，是差分晶振通用的输出信号，一般为六脚石英贴片晶振，能够很容易地识别小信号，能够从容精确地处理'双极'信号，对外部电磁干扰（EMI）是高度免疫的.实现高频高精度等要求，更加保障了各种系统参考时钟的可靠性，具有高性能，低功耗，低噪声，低抖动，低损耗等特点.被广泛用于通讯设备，机顶盒，光端机，安防设备及各种频率控制设备上.

SG2016HHN,SG2520HHN-2

石英晶体振荡器	型号	频率	尺寸	输出方式	电源电压	工作温度
X1G0048010002	SG2016CAN	24.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010012	SG2016CAN	25.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010014	SG2016CAN	16.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010016	SG2016CAN	74.250000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.710 to 3.630 V	-40 to 85 °C
X1G0048010018	SG2016CAN	20.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010019	SG2016CAN	72.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.710 to 3.630 V	-40 to 85 °C
X1G0048010020	SG2016CAN	48.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010021	SG2016CAN	27.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010022	SG2016CAN	40.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010024	SG2016CAN	25.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G0048010025	SG2016CAN	38.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010003	SG2016CAN	26.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010007	SG2016CAN	12.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010013	SG2016CAN	50.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010026	SG2016CAN	33.333300 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010027	SG2016CAN	10.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010028	SG2016CAN	50.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010029	SG2016CAN	10.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010030	SG2016CAN	4.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010031	SG2016CAN	24.576000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010035	SG2016CAN	25.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010036	SG2016CAN	40.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010039	SG2016CAN	26.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010040	SG2016CAN	24.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010044	SG2016CAN	12.288000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010045	SG2016CAN	8.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010046	SG2016CAN	8.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010049	SG2016CAN	4.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010050	SG2016CAN	12.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G0048010051	SG2016CAN	12.000000 MHz	爱普生晶振	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010052	SG2016CAN	12.288000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G0048010053	SG2016CAN	12.288000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010054	SG2016CAN	14.745600 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010055	SG2016CAN	14.745600 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010056	SG2016CAN	16.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010057	SG2016CAN	20.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G0048010058	SG2016CAN	20.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010059	SG2016CAN	24.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G0048010060	SG2016CAN	24.576000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010061	SG2016CAN	27.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010062	SG2016CAN	32.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010063	SG2016CAN	32.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010064	SG2016CAN	33.330000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010065	SG2016CAN	33.330000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010066	SG2016CAN	33.333300 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010067	SG2016CAN	40.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 85 °C
X1G0048010068	SG2016CAN	48.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G0048010069	SG2016CAN	48.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-40 to 105 °C
X1G0048010070	SG2016CAN	50.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G0048010071	SG2016CAN	72.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.710 to 3.630 V	-20 to 70 °C
X1G0048010072	SG2016CAN	72.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.710 to 3.630 V	-40 to 85 °C
X1G0048010073	SG2016CAN	72.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	2.250 to 3.630 V	-40 to 105 °C
X1G0048010076	SG2016CAN	32.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C
X1G0048010077	SG2016CAN	26.000000 MHz	2.00 x 1.60 x 0.70 mm	CMOS	1.600 to 3.630 V	-20 to 70 °C

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本文关键词：EPSON超小型SG2016HHN差分晶振 X1G0062310001 数据中心6G晶振

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