![搜索 搜索](/Skins/Default/Img/Index/sousuo.jpg)
![搜索 搜索](/Skins/Default/Img/Index/sousuo.jpg)
EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振,日本进口晶振,EPSON爱普生株式会社,型号:SG2016HHN,编码为:X1G0062310001,频率为:156.250000MHz,小体积晶振尺寸:2.0x1.6x0.73mm,HCSL输出差分晶振,低相位抖动晶体振荡器SPXO,六脚贴片晶振,电源电压+2.5V或+3.3V,爱普生的SG2016HHN产品系列支持HCSL(高速电流转向逻辑),并满足在PCIe Gen6为止的时间遵从性抖动要求。产品组最大90 ps相位抖动,支持频率从25MHz到5MHz500MHz,涵盖了大多数网络、数据中心和通信应用的系统要求。SG2016HHN有源晶振具有超小型,轻薄型,低相位噪声,低抖动,低功耗,低电源电压,低耗能,低损耗等特点。应用于:使用PCIe Gen5或6的通信设备(SSD、网卡等),光通信、光收发器,路由器,交换机、GPS定位系统,光纤通信,10G以太网等应用。
EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振,参数图
Item
Symbol
SG2016HHN
Conditions / Remarks
Output frequency range
fo
156.250000 MHz
Please contact us for available frequencies.
Supply voltage
VCC
D:2.5 V ± 5 % C:3.3 V± 5 %
Storage temperature
T_stg
-55 ℃ to +125 ℃
Operating temperature
T_use
G: -40℃ to +85℃, H: -40℃ to +105 ℃
Frequency tolerance
f_tol
C: ±20 × 10-6 Max.
Includes initial frequency tolerance, frequency / temperature characteristics, frequency / voltage coefficient and 10 years aging (+25 °C)
Current consumption
ICC
35 mA Max.
25 MHz ≤ fo < 212 MHz
OE or S? T? = VCC,
40 mA Max.
212 MHz ≤ fo < 500 MHz
L_HCSL = 50 Ω
Disable current
I_dis
25 mA Max.
OE = GND
Stand-by current
I_std
30 μA Max.
S? T? = GND, T_use Max. = +85 °C
60 μA Max.
S? T? = GND, T_use Max. = +105 °C
Symmetry
SYM
45 % to 55 %
At output crossing point
Output voltage
0.5 V to 0.7 V
25 MHz ≤ fo < 212 MHz
Output option: A
VOH
0.4 V to 0.65 V
212 MHz ≤ fo < 500 MHz
0.6 V to 0.8 V
25 MHz ≤ fo < 212 MHz
Output option: B
0.5 V to 0.75 V
212 MHz ≤ fo < 500 MHz
VOL
-0.15 V to +0.15 V
Differential swing
VSW
0.7 V to 1.4 V
Output option: A
0.8 V to 1.6 V
Output option: B
Crossing voltage
VCR
0.25 V to 0.55 V
Rise time / Fall time
tr/tf
0.7 ns Max.
20 % - 80 % (VOH - VOL)
Differential output
Rr/Rf
2 V/ns to 10 V/ns
Between -0.15 V and 0.15 V of differential output
rise slew rate / fall slew rate
Output load condition
L_HCSL
50 Ω
Input voltage
VIH
70 % VCC Min.
OE or S? T? terminal
VIL
30 % VCC Max.
Output enable time
tsta_oe
500 ns Max.
t = 0 at OE = 70 % VCC
tsta_st
10 ms Max.
t = 0 at S? T? = 70 % VCC
Output disable time
tstp_oe
100 ns Max.
t = 0 at OE = 30 % VCC
tstp_st
100 ns Max.
t = 0 at S? T? = 30 % VCC
Start-up time
t_str
10 ms Max.
t = 0 at 90 % VCC
Phase jitter
200 fs Max.
25 MHz ≤ fo < 100 MHz
Offset frequency
tPJ
90 fs Max.
100 MHz ≤ fo ≤ 156 MHz
fo < 50 MHz:
70 fs Max.
156 MHz < fo ≤ 212 MHz
12 kHz to 5 MHz fo ≥ 50 MHz:
60 fs Max.
212 MHz < fo ≤ 391 MHz
12 kHz to 20 MHz
50 fs Max.
391 MHz < fo ≤ 500 MHz
Jitter
tc-c
60 ps Max.
Cycle to cycle jitter (Peak to Peak)
PCIe jitter limits
-
0.1 ps Max.
For PCIe Gen5
for CC architecture
0.06 ps Max.
For PCIe Gen6
EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振,尺寸图
EPSON超小型SG2016HHN差分晶振,X1G0062310001,数据中心6G晶振
差分晶振有不同的输出信号,LV-PECL,LVDS,HCSL,是差分晶振通用的输出信号,一般为六脚石英贴片晶振,能够很容易地识别小信号,能够从容精确地处理'双极'信号,对外部电磁干扰(EMI)是高度免疫的.实现高频高精度等要求,更加保障了各种系统参考时钟的可靠性,具有高性能,低功耗,低噪声,低抖动,低损耗等特点.被广泛用于通讯设备,机顶盒,光端机,安防设备及各种频率控制设备上.
石英晶体振荡器 | 型号 | 频率 | 尺寸 | 输出方式 | 电源电压 | 工作温度 |
X1G0048010002 | SG2016CAN | 24.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010012 | SG2016CAN | 25.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010014 | SG2016CAN | 16.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010016 | SG2016CAN | 74.250000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.710 to 3.630 V | -40 to 85 °C |
X1G0048010018 | SG2016CAN | 20.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010019 | SG2016CAN | 72.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.710 to 3.630 V | -40 to 85 °C |
X1G0048010020 | SG2016CAN | 48.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010021 | SG2016CAN | 27.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010022 | SG2016CAN | 40.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010024 | SG2016CAN | 25.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -20 to 70 °C |
X1G0048010025 | SG2016CAN | 38.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010003 | SG2016CAN | 26.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010007 | SG2016CAN | 12.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010013 | SG2016CAN | 50.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010026 | SG2016CAN | 33.333300 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010027 | SG2016CAN | 10.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010028 | SG2016CAN | 50.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010029 | SG2016CAN | 10.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010030 | SG2016CAN | 4.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010031 | SG2016CAN | 24.576000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010035 | SG2016CAN | 25.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010036 | SG2016CAN | 40.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010039 | SG2016CAN | 26.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010040 | SG2016CAN | 24.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010044 | SG2016CAN | 12.288000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010045 | SG2016CAN | 8.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010046 | SG2016CAN | 8.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010049 | SG2016CAN | 4.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010050 | SG2016CAN | 12.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -20 to 70 °C |
X1G0048010051 | SG2016CAN | 12.000000 MHz | 爱普生晶振 | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010052 | SG2016CAN | 12.288000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -20 to 70 °C |
X1G0048010053 | SG2016CAN | 12.288000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010054 | SG2016CAN | 14.745600 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010055 | SG2016CAN | 14.745600 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010056 | SG2016CAN | 16.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010057 | SG2016CAN | 20.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -20 to 70 °C |
X1G0048010058 | SG2016CAN | 20.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010059 | SG2016CAN | 24.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -20 to 70 °C |
X1G0048010060 | SG2016CAN | 24.576000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010061 | SG2016CAN | 27.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010062 | SG2016CAN | 32.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010063 | SG2016CAN | 32.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010064 | SG2016CAN | 33.330000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010065 | SG2016CAN | 33.330000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010066 | SG2016CAN | 33.333300 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010067 | SG2016CAN | 40.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 85 °C |
X1G0048010068 | SG2016CAN | 48.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -20 to 70 °C |
X1G0048010069 | SG2016CAN | 48.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -40 to 105 °C |
X1G0048010070 | SG2016CAN | 50.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -20 to 70 °C |
X1G0048010071 | SG2016CAN | 72.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.710 to 3.630 V | -20 to 70 °C |
X1G0048010072 | SG2016CAN | 72.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.710 to 3.630 V | -40 to 85 °C |
X1G0048010073 | SG2016CAN | 72.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 2.250 to 3.630 V | -40 to 105 °C |
X1G0048010076 | SG2016CAN | 32.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -20 to 70 °C |
X1G0048010077 | SG2016CAN | 26.000000 MHz | 2.00 x 1.60 x 0.70 mm | CMOS | 1.600 to 3.630 V | -20 to 70 °C |
服务热线:0755-27839045
Q Q联系:262320519
邮箱:szceob2b@163.com